Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hyewon | - |
dc.contributor.author | Kim, Joonhyun | - |
dc.contributor.author | Eo, Yungseon | - |
dc.date.accessioned | 2021-06-22T17:05:20Z | - |
dc.date.available | 2021-06-22T17:05:20Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14193 | - |
dc.description.abstract | A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a 0.18-mu m SK Hynix CMOS process and 0.13-mu m Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequencyvariant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Eo, Yungseon | - |
dc.identifier.doi | 10.1109/TMTT.2016.2519018 | - |
dc.identifier.scopusid | 2-s2.0-84956868455 | - |
dc.identifier.wosid | 000372488600026 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.64, no.3, pp.931 - 938 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 64 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 931 | - |
dc.citation.endPage | 938 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | CHARACTERISTIC-IMPEDANCE | - |
dc.subject.keywordAuthor | De-embedding | - |
dc.subject.keywordAuthor | interconnect | - |
dc.subject.keywordAuthor | measurements | - |
dc.subject.keywordAuthor | scattering parameters | - |
dc.subject.keywordAuthor | transmission line (TL) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/7394938 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.