Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.contributor.author | Kim, Ja-Yong | - |
dc.date.accessioned | 2021-06-22T17:23:45Z | - |
dc.date.available | 2021-06-22T17:23:45Z | - |
dc.date.issued | 2016-01 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.issn | 1873-5568 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/14612 | - |
dc.description.abstract | In this study, we investigated the effect of annealing conditions on the formation of SrRuO3 films by the interfacial reaction of SrO/RuO2 bi-layer films. We found that the annealing temperature and thickness of the SrO layer along with the annealing atmosphere were critical variables in the formation of the conformal SrRuO3 film. By annealing SrO(20 nm)/RuO2 bi-layer film at 700 °C in O2 atmosphere at 1 Torr, the conformal SrRuO3 film was formed. Finally, we evaluated the potential applicability of the SrRuO3 film as a functional electrode for perovskite-structured dielectrics, and the dielectric constant of SrTiO3 film deposited on the SrRuO3 electrode increased by almost 2.5 times in comparison with that of a film on a Ru electrode. © 2015 Published by Elsevier B.V. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier BV | - |
dc.title | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.mee.2015.09.015 | - |
dc.identifier.scopusid | 2-s2.0-84942881273 | - |
dc.identifier.wosid | 000367420200012 | - |
dc.identifier.bibliographicCitation | Microelectronic Engineering, v.149, pp 62 - 65 | - |
dc.citation.title | Microelectronic Engineering | - |
dc.citation.volume | 149 | - |
dc.citation.startPage | 62 | - |
dc.citation.endPage | 65 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INSULATOR-METAL CAPACITORS | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Capacitor electrode | - |
dc.subject.keywordAuthor | Rapid thermal annealing | - |
dc.subject.keywordAuthor | Strontium ruthenate | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167931715300617?pes=vor | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.