The adsorption and removal of corrosion inhibitors during metal CMP
DC Field | Value | Language |
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dc.contributor.author | Park, Jin-Goo | - |
dc.contributor.author | Ryu, Heon Yul | - |
dc.contributor.author | Kim, Tae Gon | - |
dc.contributor.author | Yerriboina, Nagendra.Prasad | - |
dc.contributor.author | Wada, Yutaka | - |
dc.contributor.author | Hamada, Satomi | - |
dc.contributor.author | Hiyama, Hirokuni | - |
dc.date.accessioned | 2021-06-22T09:10:49Z | - |
dc.date.available | 2021-06-22T09:10:49Z | - |
dc.date.issued | 2020-06 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1496 | - |
dc.description.abstract | Corrosion inhibitor plays a key role during Chemical mechanical planarization (CMP) of metal surfaces during semiconductor processing. Strong metal-inhibitor passivation formation during the CMP process and its easy removal during post-CMP cleaning are highly required. However, there are no studies available explaining this phenomenon. In this work, passivation changes of copper (Cu) and cobalt (Co) surfaces during CMP and post CMP cleaning by adsorption and removal of benzotriazole (BTA), was characterized using a new sequential electrochemical impedance spectroscopy (EIS) technique. It was found that stable Cu/Co-BTA complex (metal-inhibitor passivation) was formed when each metal surface was exposed to BTA solution. However, it was found that adsorbed BTA on Co surface could be removed just by de-ionized (DI) water rinsing while BTA on Cu surface was not removed. © 2020 IEEE. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | The adsorption and removal of corrosion inhibitors during metal CMP | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/CSTIC49141.2020.9282467 | - |
dc.identifier.scopusid | 2-s2.0-85099232094 | - |
dc.identifier.wosid | 000682768500081 | - |
dc.identifier.bibliographicCitation | China Semiconductor Technology International Conference 2020, CSTIC 2020, pp 1 - 3 | - |
dc.citation.title | China Semiconductor Technology International Conference 2020, CSTIC 2020 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.docType | Conference Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Hardware & Architecture | - |
dc.relation.journalWebOfScienceCategory | Engineering, Manufacturing | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | Cobalt metallography | - |
dc.subject.keywordPlus | Copper compounds | - |
dc.subject.keywordPlus | Copper metallography | - |
dc.subject.keywordPlus | Corrosion inhibitors | - |
dc.subject.keywordPlus | Electrochemical corrosion | - |
dc.subject.keywordPlus | Electrochemical impedance spectroscopy | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | Passivation | - |
dc.subject.keywordPlus | Semiconductor device manufacture | - |
dc.subject.keywordPlus | Benzotriazole(BTA) | - |
dc.subject.keywordPlus | CMP process | - |
dc.subject.keywordPlus | Cu surfaces | - |
dc.subject.keywordPlus | Metal inhibitors | - |
dc.subject.keywordPlus | Metal surfaces | - |
dc.subject.keywordPlus | Post-CMP cleaning | - |
dc.subject.keywordPlus | Semiconductor processing | - |
dc.subject.keywordPlus | Water rinsing | - |
dc.subject.keywordPlus | Metal cleaning | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9282467 | - |
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