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Feasibility of a new absorber material for high NA extreme ultraviolet lithography
- Authors
- Ko, Ki-Ho; Oh, Hye-Keun
- Issue Date
- Mar-2016
- Publisher
- SPIE
- Keywords
- EUVL; high NA; PSM; thin absorber
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v.9776, pp 1 - 6
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Proceedings of SPIE - The International Society for Optical Engineering
- Volume
- 9776
- Start Page
- 1
- End Page
- 6
- ISSN
- 0277-786X
- Abstract
- The extreme-ultraviolet lithography (EUVL) has been regarded as the best candidate to achieve high resolution patterning below 1x nm node. From the Rayleigh criterion, a numerical aperture (NA) should be increased to make the high resolution pattern. A new absorber structure which has sufficient image contrast and small height is needed for realization of high NA optics. In this study, 28 nm-thick ruthenium oxide (RuO2) is suggested for the absorber material. We could obtain higher image contrast and better H-V bias by using the RuO2 absorber compared to the other materials such as TaN and TaBN. © 2016 SPIE.
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