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Analysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs

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dc.contributor.authorChoi, H.-S.-
dc.contributor.authorShim, J.-I.-
dc.date.accessioned2021-06-22T18:21:56Z-
dc.date.available2021-06-22T18:21:56Z-
dc.date.issued2016-01-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/15979-
dc.description.abstractThis paper reports the analysis of the near-ultraviolet light-emitting-diodes (NUV LEDs) characteristics with increasing the number of QWs from 5 to 7 by same growth process. By means of optical, electrical characterization and carrier rate equation analysis, we show that the NUV LEDs performances were improved with increasing the number of QWs by decreasing the non-radiative recombination rate. © 2015 IEEE.-
dc.format.extent2-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleAnalysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/CLEOPR.2015.7376171-
dc.identifier.scopusid2-s2.0-84964017446-
dc.identifier.bibliographicCitation2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v.2, pp 1 - 2-
dc.citation.title2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015-
dc.citation.volume2-
dc.citation.startPage1-
dc.citation.endPage2-
dc.type.docTypeConference Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusCarrier rate equation-
dc.subject.keywordPlusElectrical characterization-
dc.subject.keywordPlusGrowth process-
dc.subject.keywordPlusNear-ultraviolet LED-
dc.subject.keywordPlusNear-ultraviolet light-emitting diode-
dc.subject.keywordPlusNon-radiative recombinations-
dc.subject.keywordPlusNUV LEDs-
dc.subject.keywordPlusLight emitting diodes-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7376171-
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