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Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Hyo-Shik | - |
| dc.contributor.author | Shin, Dong Soo | - |
| dc.contributor.author | Shim, Jong In | - |
| dc.date.accessioned | 2021-06-22T18:21:58Z | - |
| dc.date.available | 2021-06-22T18:21:58Z | - |
| dc.date.issued | 2016-01 | - |
| dc.identifier.issn | 0000-0000 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/15981 | - |
| dc.description.abstract | We analyzed the influence of the p-type GaN layer thickness on the 380nm band near-ultraviolet light-emitting diodes. Both electrical and optical characteristics of the LEDs were getting worse p-type GaN layer thickness increases with growth time. We suggest that the possible degradation mechanisms of characteristics are due to the increase of the non-radiative (NR) recombination rate in the active region as a result of thermal damage during p-type GaN layer growth process. © 2015 IEEE. | - |
| dc.format.extent | 2 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/CLEOPR.2015.7376086 | - |
| dc.identifier.scopusid | 2-s2.0-84964008026 | - |
| dc.identifier.bibliographicCitation | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v.2, pp 1 - 2 | - |
| dc.citation.title | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 | - |
| dc.citation.volume | 2 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 2 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Degradation | - |
| dc.subject.keywordPlus | III-V semiconductors | - |
| dc.subject.keywordPlus | Light emitting diodes | - |
| dc.subject.keywordPlus | Ultraviolet radiation | - |
| dc.subject.keywordPlus | Active regions | - |
| dc.subject.keywordPlus | Degradation mechanism | - |
| dc.subject.keywordPlus | Growth time | - |
| dc.subject.keywordPlus | Near-ultraviolet light-emitting diode | - |
| dc.subject.keywordPlus | Non-radiative | - |
| dc.subject.keywordPlus | Optical characteristics | - |
| dc.subject.keywordPlus | Recombination rate | - |
| dc.subject.keywordPlus | Thermal damage | - |
| dc.subject.keywordPlus | Gallium nitride | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/7376086 | - |
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- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)