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Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Youn, Dong-Kuk | - |
| dc.contributor.author | Lee, Gyeong Won | - |
| dc.contributor.author | Shim, Jong In | - |
| dc.contributor.author | Shin, Dong Soo | - |
| dc.date.accessioned | 2021-06-22T18:22:07Z | - |
| dc.date.available | 2021-06-22T18:22:07Z | - |
| dc.date.created | 2021-01-22 | - |
| dc.date.issued | 2016 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/15986 | - |
| dc.description.abstract | The temperature dependence of the short-circuit current in the InGaN/GaN multiple-quantum-well light-emitting diode is investigated. From the experiments, we demonstrate that the carrier overflow to the p-GaN clad occurs more severely with decreasing temperature, resembling the behavior of the efficiency droop and the open-circuit voltage. © 2015 IEEE. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Shim, Jong In | - |
| dc.contributor.affiliatedAuthor | Shin, Dong Soo | - |
| dc.identifier.doi | 10.1109/CLEOPR.2015.7376083 | - |
| dc.identifier.scopusid | 2-s2.0-84964018996 | - |
| dc.identifier.bibliographicCitation | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v.2, pp.1 - 2 | - |
| dc.relation.isPartOf | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 | - |
| dc.citation.title | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 | - |
| dc.citation.volume | 2 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 2 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Conference Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Gallium nitride | - |
| dc.subject.keywordPlus | III-V semiconductors | - |
| dc.subject.keywordPlus | Light | - |
| dc.subject.keywordPlus | Light emitting diodes | - |
| dc.subject.keywordPlus | Open circuit voltage | - |
| dc.subject.keywordPlus | Quantum well lasers | - |
| dc.subject.keywordPlus | Temperature distribution | - |
| dc.subject.keywordPlus | Timing circuits | - |
| dc.subject.keywordPlus | Efficiency droops | - |
| dc.subject.keywordPlus | InGaN/GaN | - |
| dc.subject.keywordPlus | InGaN/GaN multiple quantum well light emitting diodes | - |
| dc.subject.keywordPlus | Temperature dependence | - |
| dc.subject.keywordPlus | Temperature dependent | - |
| dc.subject.keywordPlus | Semiconductor quantum wells | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/7376083 | - |
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)