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Gate-tunable, high-responsivity, and room-temperature infrared photodetectors based on a graphene-Bi2Se3 heterostructure
- Authors
- Kim, Jaeseok; Jang, Houk; Koirala, Nikesh; Sim, Sangwan; Lee, Jae-bok; Kim, Un Jeong; Lee, Hyangsook; Cha, Soonyoung; In, Chihun; Park, Jun; Lee, Jekwan; Brahlek, Matthew; Moon, Jisoo; Salehi, Maryam; Oh, Seongshik; Ahn, Jong-Hyun; Hwang, Sungwoo; Kim, Dohun; Choi, Hyunyong
- Issue Date
- Jun-2016
- Publisher
- IEEE
- Citation
- 2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.1-2
- Indexed
- SCIE
SCOPUS
- Journal Title
- 2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
- Start Page
- 1-2
- ISSN
- 2160-9020
- Abstract
- We demonstrate infrared photodetectors based on graphene-Bi2Se3 heterostructures with high responsivity (>= 1.9 A/W) at room temperature. Strong photogating effect across the tunneling barrier and built-in potential enables the internal quantum efficiency larger than 100 %.
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Related Researcher
- Sim, Sang wan
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)