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InGaN/GaN 발광다이오드에서 Piezoelectric Field와 Internal Quantum Efficiency (IQE) 사이의 관계 분석
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 심종인 | - |
| dc.date.accessioned | 2021-06-22T18:33:13Z | - |
| dc.date.available | 2021-06-22T18:33:13Z | - |
| dc.date.issued | 2014-08-18 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/16285 | - |
| dc.title | InGaN/GaN 발광다이오드에서 Piezoelectric Field와 Internal Quantum Efficiency (IQE) 사이의 관계 분석 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제 10회 LED.반도체조명학회 | - |
| dc.citation.conferencePlace | 경희대학교 | - |
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)