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Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction
- Issue Date
- Oct-2015
- Publisher
- SPIE - International Society for Optical Engineering
- Keywords
- extreme-ultraviolet lithography; defect-free mask; contaminations; extreme-ultraviolet pellicle; multistack structure; out-of-band radiation
- Citation
- Journal of Micro/ Nanolithography, MEMS, and MOEMS, v.14, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Micro/ Nanolithography, MEMS, and MOEMS
- Volume
- 14
- Number
- 4
- ISSN
- 1932-5150
- Abstract
- We report on out-of-band (OoB) radiation that can cause degradation to the image quality in extreme-ultraviolet (EUV) lithography systems. We investigated the effect of OoB radiation with an EUV pellicle and found the maximum allowable reflectivity of OoB radiation from the EUV pellicle that can satisfy certain criteria (i.e., the image critical dimension error, contrast, and normalized image log slope). We suggested a multistack EUV pellicle that can obtain a high EUV transmission, minimal reflectivity of OoB radiation, and sufficient deep ultraviolet transmission for defect inspection and alignment without removing the EUV pellicle in an EUV lithography system. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
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Related Researcher
- Park, Jin Goo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)