Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO2 film on Ge substrate for interface passivation
DC Field | Value | Language |
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dc.contributor.author | Cho, Deok-Yong | - |
dc.contributor.author | Seok, Tae Jun | - |
dc.contributor.author | Jin, Hyun Soo | - |
dc.contributor.author | Song, Hochul | - |
dc.contributor.author | Han, Seungwu | - |
dc.contributor.author | Park, Tae Joo | - |
dc.date.accessioned | 2021-06-22T19:22:12Z | - |
dc.date.available | 2021-06-22T19:22:12Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2015-09 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/17398 | - |
dc.description.abstract | Sulfur was embedded in atomic-layer-deposited (ALD) HfO2 films grown on Ge substrate by annealing under H2S gas before and after HfO2 ALD. The chemical states of sulfur in the film were examined by S K-edge X-ray absorption spectroscopy. It was revealed that the valences of S-ions were mostly -2 at Ge/HfO2 interface (GeSx or HfO2-ySy to passivate the interface), while they were mostly +6 in HfO2 layers (sulfates; HfO2-z(SO4)(z)). The leakage current density in post-deposition-treated film was lower than that in pre-deposition-treated one. This suggests that the passivation of defects in oxide layer by sulfate ions is more effective to lower the leakage current rather than the interface defect passivation by S-2 ions. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Wiley - VCH Verlag GmbH & CO. KGaA | - |
dc.title | Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO2 film on Ge substrate for interface passivation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1002/pssr.201510237 | - |
dc.identifier.scopusid | 2-s2.0-84942198730 | - |
dc.identifier.wosid | 000363267100003 | - |
dc.identifier.bibliographicCitation | Physica Status Solidi - Rapid Research Letetrs, v.9, no.9, pp.511 - 515 | - |
dc.relation.isPartOf | Physica Status Solidi - Rapid Research Letetrs | - |
dc.citation.title | Physica Status Solidi - Rapid Research Letetrs | - |
dc.citation.volume | 9 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 511 | - |
dc.citation.endPage | 515 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ADSORPTION | - |
dc.subject.keywordPlus | GE(100) | - |
dc.subject.keywordPlus | H2S | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordAuthor | HfO2 films | - |
dc.subject.keywordAuthor | sulfur oxidation | - |
dc.subject.keywordAuthor | high-k dielectrics | - |
dc.subject.keywordAuthor | X-ray absorption spectroscopy | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/pssr.201510237 | - |
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