Influence of p-GaN shape on the light emission characteristics of InGaN nanodisk embedded p-i-n GaN nanorods
- Authors
- Park, Byung-Guon; Kumar, R. Saravana; Lee, Sang-Tae; Moon, Mee-Lim; Kim, Moon-Deock; Oh, Jae-Eung
- Issue Date
- Sep-2015
- Publisher
- ELSEVIER
- Keywords
- Nanostructures; GaN; PA-MBE; Morphology; Photoluminescence
- Citation
- CURRENT APPLIED PHYSICS, v.15, no.supple.2, pp.S2 - S6
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 15
- Number
- supple.2
- Start Page
- S2
- End Page
- S6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/17404
- DOI
- 10.1016/j.cap.2015.04.029
- ISSN
- 1567-1739
- Abstract
- InGaN nanodisk embedded GaN nanorods (NRs) with different p-GaN morphologies were grown on Si(111) substrate by plasma-assisted molecular beam epitaxy. Tapered and non-tapered p-GaN top was obtained by varying the growth conditions namely growth temperature and N-2 plasma power, and the morphology evolution was explained based on the interrelation between sidewall diffusion and direct impingement during the NRs growth. Photoluminescence measurements revealed higher light emission for tapered p-GaN when compared to non-tapered structure. APSYS simulations were further conducted to theoretically confirm the observed experimental results. Our results indicate that the fabrication of InGaN-GaN multi-quantum well NRs light emitting diodes (LEDs) with tapered top p-GaN will be a promising approach for the realization of high brightness LEDs. (C) 2015 Elsevier B.V. All rights reserved.
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