Impact of the non-uniform intensity distribution caused by a meshed pellicle of extreme ultraviolet lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Ki-Ho | - |
dc.contributor.author | Park, Jin-Goo | - |
dc.contributor.author | Ahn, Jin-Ho | - |
dc.contributor.author | Yeung, Michael | - |
dc.contributor.author | Barouch, Eytan | - |
dc.contributor.author | Oh, Hye-Keun | - |
dc.date.accessioned | 2021-06-22T19:23:18Z | - |
dc.date.available | 2021-06-22T19:23:18Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2015-08 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/17444 | - |
dc.description.abstract | A physical optics simulation was performed to simulate intensity non-uniformity on a wafer passing through an extreme ultraviolet meshed pellicle. The non-uniformity is directly related to the coherence radius of the illumination and the mesh parameters. The intensity non-uniformity was reduced when using illumination conditions with a larger coherence radius in a fixed mesh pitch. The circular illumination sigma(r) = 0.5 can accommodate a five times larger pitch than the dipole illumination sigma(r) = 0.1. An aerial image simulation for a 16 nm half-pitch pattern was also performed to confirm the critical dimension uniformity (CDU) caused by the meshed pellicle. The CDU is directly proportional to the non-uniformity on the wafer in order to determine suitable mesh parameters that produce a small CDU through a non-uniform intensity distribution calculation. The non-uniformity on the wafer should be less than 0.2% in order to achieve the desired CDU less than 0.1 nm. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier BV | - |
dc.title | Impact of the non-uniform intensity distribution caused by a meshed pellicle of extreme ultraviolet lithography | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Goo | - |
dc.contributor.affiliatedAuthor | Oh, Hye-Keun | - |
dc.identifier.doi | 10.1016/j.mee.2015.03.009 | - |
dc.identifier.scopusid | 2-s2.0-84925424205 | - |
dc.identifier.wosid | 000357908700008 | - |
dc.identifier.bibliographicCitation | Microelectronic Engineering, v.143, pp.31 - 36 | - |
dc.relation.isPartOf | Microelectronic Engineering | - |
dc.citation.title | Microelectronic Engineering | - |
dc.citation.volume | 143 | - |
dc.citation.startPage | 31 | - |
dc.citation.endPage | 36 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | EUVL | - |
dc.subject.keywordAuthor | Pellicle | - |
dc.subject.keywordAuthor | EUV pellicle | - |
dc.subject.keywordAuthor | Meshed pellicle | - |
dc.subject.keywordAuthor | Mask defect control | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167931715001227?via%3Dihub | - |
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