1/f Noise Scaling Analysis in Unipolar-Type Organic Nanocomposite Resistive Memory
DC Field | Value | Language |
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dc.contributor.author | Song, Younggul | - |
dc.contributor.author | Jeong, Hyunhak | - |
dc.contributor.author | Jang, Jingon | - |
dc.contributor.author | Kim, Tae-Young | - |
dc.contributor.author | Yoo, Daekyoung | - |
dc.contributor.author | Kim, Youngrok | - |
dc.contributor.author | Jeong, Heejun | - |
dc.contributor.author | Lee, Takhee | - |
dc.date.accessioned | 2021-06-22T19:41:43Z | - |
dc.date.available | 2021-06-22T19:41:43Z | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.issn | 1936-086X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/17841 | - |
dc.description.abstract | We studied noise characteristics of a nanocomposite of polyimide (PI) and phenyl-C61-butyric acid methyl ester (PCBM) (denoted as PI:PCBM), a composite for the organic nonvolatile resistive memory material. The current fluctuations were investigated over a bias range that covers various intermediate resistive states and negative differential resistance (NDR) in organic nanocomposite unipolar resistive memory devices. From the analysis of the 1/f(y) type noises, scaling behavior between the relative noise power spectral density (S) over tilde and resistance R was observed, indicating a percolating behavior. Considering a linear rate equation of the charge trapping-detrapping at traps, the percolation behavior and NOR could be understood by the modulation of the conductive phase fraction phi with an external bias. This study can enhance the understanding of the NOR phenomena in organic nanocomposite unipolar resistive memory devices in terms of the current path formation and the memory switching. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | American Chemical Society | - |
dc.title | 1/f Noise Scaling Analysis in Unipolar-Type Organic Nanocomposite Resistive Memory | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsnano.5b03168 | - |
dc.identifier.scopusid | 2-s2.0-84938152109 | - |
dc.identifier.wosid | 000358823200107 | - |
dc.identifier.bibliographicCitation | ACS Nano, v.9, no.7, pp 7697 - 7703 | - |
dc.citation.title | ACS Nano | - |
dc.citation.volume | 9 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 7697 | - |
dc.citation.endPage | 7703 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | TRAPS | - |
dc.subject.keywordAuthor | organic nanocomposite | - |
dc.subject.keywordAuthor | organic memory | - |
dc.subject.keywordAuthor | unipolar resistive memory | - |
dc.subject.keywordAuthor | noise characterization | - |
dc.subject.keywordAuthor | percolation | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsnano.5b03168 | - |
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