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중이온에 의한 SDRAM 컴포넌트의 리텐션 시간 측정 연구Retention Time Test on Heavy Ion-Induced SDRAM Devices
- Other Titles
- Retention Time Test on Heavy Ion-Induced SDRAM Devices
- Issue Date
- Jun-2015
- Publisher
- 대한전자공학회
- Citation
- 대한전자공학회 2015년도 하계종합학술대회 논문집, pp 2557 - 2558
- Pages
- 2
- Indexed
- OTHER
- Journal Title
- 대한전자공학회 2015년도 하계종합학술대회 논문집
- Start Page
- 2557
- End Page
- 2558
- Abstract
- A single particle generates a Single Event Upset(SEU) as well as dose effects in silicon devices. The dose effects affect the threshold voltage decreasing, consequently, the data in DRAM bit cell could be corrupted within the 64 ms refresh interval. The experiments were performed by using heavy ion with SDRAM devices. The number of word failure was increased after beam irradiated.
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)