Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Seung Ryul | - |
dc.contributor.author | Ahn, Byung Tae | - |
dc.contributor.author | Kang, Bo Soo | - |
dc.date.accessioned | 2021-06-22T19:44:55Z | - |
dc.date.available | 2021-06-22T19:44:55Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/17973 | - |
dc.description.abstract | A uniform epitaxial CoSi2 layer could be grown on a Si(100) substrate by deposition of a CoN (x) interlayer followed by an in situ annealing process. The amorphous Si-N layer which is formed at the CoN (x) /Si interface plays a role in inhibiting excessive Co incorporation into Si layer and consequently enhancing the epitaxial growth of CoSi2 layer. However, the Si-N layer also limits the growth of thick CoSi2 layer. Therefore, the thickness of the amorphous Si-N layer is an important factor for the epitaxial growth of the CoSi2 layer with uniform structure and low sheet resistance. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.title | Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Bo Soo | - |
dc.identifier.doi | 10.1007/s00339-015-9117-0 | - |
dc.identifier.scopusid | 2-s2.0-84937762004 | - |
dc.identifier.wosid | 000354187100030 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.119, no.4, pp.1437 - 1441 | - |
dc.relation.isPartOf | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.citation.title | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.citation.volume | 119 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1437 | - |
dc.citation.endPage | 1441 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | OXIDE-MEDIATED EPITAXY | - |
dc.subject.keywordPlus | REACTIVE DEPOSITION | - |
dc.subject.keywordPlus | SI(100) SUBSTRATE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | COBALT | - |
dc.subject.keywordPlus | SILICIDATION | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | SI(001) | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordAuthor | OXIDE-MEDIATED EPITAXY | - |
dc.subject.keywordAuthor | REACTIVE DEPOSITION | - |
dc.subject.keywordAuthor | SI(100) SUBSTRATE | - |
dc.subject.keywordAuthor | SILICON | - |
dc.subject.keywordAuthor | COBALT | - |
dc.subject.keywordAuthor | SILICIDATION | - |
dc.subject.keywordAuthor | STABILITY | - |
dc.subject.keywordAuthor | SI(001) | - |
dc.subject.keywordAuthor | LAYER | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s00339-015-9117-0 | - |
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