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Optimized ARC on top of absorber for EUV mask inspection with 193 nm wavelength for 22 nm node and below
- Authors
- 오혜근
- Issue Date
- 6-Oct-2013
- Publisher
- EIDEC
- Citation
- 2013 International Symposium on Extreme Ultraviolet Lithography
- Conference Name
- 2013 International Symposium on Extreme Ultraviolet Lithography
- Place
- Toyama, Japan
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