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Formation of AlN seed layers on (110) Si substrates by plasma-assisted molecular beam epitaxy

Authors
오재응
Issue Date
4-Jul-2013
Publisher
The Korean Physical Society
Citation
the 16th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2013)
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18250
Conference Name
the 16th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2013)
Place
Ramada Plasa Jeju hotel
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COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 2. Conference Papers

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