Formation of Silicon (Si) Grains in AlN Thin Layer Grown on an Si(111) Substrate: Effect of Deposition Sequence

Abstract

The dependence on the deposition sequence of microstructural properties of AlN layers grown on an Si(1 1 1) substrate was studied in detail using transmission electron microscope techniques. When aluminum (Al) was predeposited to prevent the formation of an amorphous SixNy layer at the interface, crystallized silicon (Si) grains were observed in the AlN layer. However, the AlN layer was free from the crystalline Si grains when the Si substrate was exposed to nitrogen plasma first. However, twisted crystal planes and a rough AlN/Si interface were observed in the AlN layer grown on the nitridated Si substrate.