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Improvement of PBTS stability in self-aligned coplanar a-IGZO TFTs

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dc.contributor.authorOh, Saeroonter-
dc.contributor.authorBaeck, Ju heyuck-
dc.contributor.authorLee, Dohyung-
dc.contributor.authorPark, Taeuk-
dc.contributor.authorShin, Hyun soo-
dc.contributor.authorBae, Jong uk-
dc.contributor.authorPark, Kwon shik-
dc.contributor.authorKang, Inbyeong-
dc.date.accessioned2021-06-22T20:43:48Z-
dc.date.available2021-06-22T20:43:48Z-
dc.date.created2021-01-22-
dc.date.issued2015-06-
dc.identifier.issn0097-966X-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/19289-
dc.description.abstractWe improve the PBTS instability of top-gate coplanar amorphous In Ga ZnO TFTs by optimizing the buffer and gate insulator layers. The interface trap density is obtained from photonic capacitance-voltage measurements and correlated with PBTS characteristics. Inter-diffusion at the gate insulator interface lessens electron trap defects, which brings improvement in PBTS from δh = 4.2 V to 0.5 V. © 2015 SID.-
dc.language영어-
dc.language.isoen-
dc.publisherBlackwell Publishing Ltd-
dc.titleImprovement of PBTS stability in self-aligned coplanar a-IGZO TFTs-
dc.typeArticle-
dc.contributor.affiliatedAuthorOh, Saeroonter-
dc.identifier.doi10.1002/sdtp.10032-
dc.identifier.scopusid2-s2.0-84962637104-
dc.identifier.bibliographicCitationDigest of Technical Papers - SID International Symposium, v.46, no.1, pp.1143 - 1146-
dc.relation.isPartOfDigest of Technical Papers - SID International Symposium-
dc.citation.titleDigest of Technical Papers - SID International Symposium-
dc.citation.volume46-
dc.citation.number1-
dc.citation.startPage1143-
dc.citation.endPage1146-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusCapacitance-
dc.subject.keywordPlusField effect transistors-
dc.subject.keywordPlusII-VI semiconductors-
dc.subject.keywordPlusSemiconducting indium compounds-
dc.subject.keywordPlusZinc oxide-
dc.subject.keywordPlusA-IGZO-
dc.subject.keywordPlusC-V method-
dc.subject.keywordPlusCoplanar-
dc.subject.keywordPlusInterface trap density-
dc.subject.keywordPlusOxide tft-
dc.subject.keywordPlusPBTS-
dc.subject.keywordPlusThin film transistors-
dc.subject.keywordAuthorA-IGZO-
dc.subject.keywordAuthorCoplanar-
dc.subject.keywordAuthorInterface trap density (Dit)-
dc.subject.keywordAuthorOxide TFT-
dc.subject.keywordAuthorPBTS-
dc.subject.keywordAuthorPhoto C-V method-
dc.identifier.urlhttps://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.10032-
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