Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Improvement of PBTS stability in self-aligned coplanar a-IGZO TFTs
- Authors
- Oh, Saeroonter; Baeck, Ju heyuck; Lee, Dohyung; Park, Taeuk; Shin, Hyun soo; Bae, Jong uk; Park, Kwon shik; Kang, Inbyeong
- Issue Date
- Jun-2015
- Publisher
- Blackwell Publishing Ltd
- Keywords
- A-IGZO; Coplanar; Interface trap density (Dit); Oxide TFT; PBTS; Photo C-V method
- Citation
- Digest of Technical Papers - SID International Symposium, v.46, no.1, pp.1143 - 1146
- Indexed
- SCOPUS
- Volume
- 46
- Number
- 1
- Start Page
- 1143
- End Page
- 1146
- ISSN
- 0097-966X
- Abstract
- We improve the PBTS instability of top-gate coplanar amorphous In Ga ZnO TFTs by optimizing the buffer and gate insulator layers. The interface trap density is obtained from photonic capacitance-voltage measurements and correlated with PBTS characteristics. Inter-diffusion at the gate insulator interface lessens electron trap defects, which brings improvement in PBTS from δh = 4.2 V to 0.5 V. © 2015 SID.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.