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Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type n-Contact and Reflective Bonding Pad
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Jong-Ho | - |
| dc.contributor.author | Lee, Yong Won | - |
| dc.contributor.author | Im, Hyeong-Seop | - |
| dc.contributor.author | Oh, Chan-Hyoung | - |
| dc.contributor.author | Shim, Jong-In | - |
| dc.contributor.author | Kang, Daesung | - |
| dc.contributor.author | Seong, Tae-Yeon | - |
| dc.contributor.author | Amano, Hiroshi | - |
| dc.date.accessioned | 2021-06-22T09:23:30Z | - |
| dc.date.available | 2021-06-22T09:23:30Z | - |
| dc.date.issued | 2019-12 | - |
| dc.identifier.issn | 2162-8769 | - |
| dc.identifier.issn | 2162-8777 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1951 | - |
| dc.description.abstract | To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Omega. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm(2) than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers. (C) The Author(s) 2019. Published by ECS. | - |
| dc.format.extent | 6 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Electrochemical Society, Inc. | - |
| dc.title | Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe -Type n-Contact and Reflective Bonding Pad | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1149/2.0462001JSS | - |
| dc.identifier.scopusid | 2-s2.0-85081715809 | - |
| dc.identifier.wosid | 000503841500002 | - |
| dc.identifier.bibliographicCitation | ECS Journal of Solid State Science and Technology, v.9, no.1, pp 1 - 6 | - |
| dc.citation.title | ECS Journal of Solid State Science and Technology | - |
| dc.citation.volume | 9 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 6 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | FLIP-CHIP LEDS | - |
| dc.subject.keywordPlus | THIN-FILM | - |
| dc.subject.keywordPlus | P-TYPE | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1149/2.0462001JSS | - |
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)