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Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams
- Authors
- Bak, Geunyong; Lee, Soonyoung; Lee, Hosung; Park, Kyungbae; Baeg, Sanghyeon; Wen, Shijie; Wong, Richard; Slayman, Charlie
- Issue Date
- Apr-2015
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- DDR3 SDRAM; logic upset cluster; single event upset
- Citation
- IEEE International Reliability Physics Symposium Proceedings, v.2015, pp.SE31 - SE35
- Indexed
- SCOPUS
- Volume
- 2015
- Start Page
- SE31
- End Page
- SE35
- ISSN
- 1541-7026
- Abstract
- Logic upsets in 3x nm DDR3 SDRAM have been observed with both 45 MeV proton and neutron irradiation. The logic upsets caused massive bit flips, which manifested as either column or row clusters. If all the bits flipped by a logic upset are counted as multiple pseudo SBU events, then the cross-section value of the pseudo SBU events was, at least, four orders of magnitude higher than that of the SBU events. © 2015 IEEE.
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)