Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory
DC Field | Value | Language |
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dc.contributor.author | Yoon, Jungkyu | - |
dc.contributor.author | Hong, Seunghyeon | - |
dc.contributor.author | Song, Yong Won | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.contributor.author | Ahn, Seung-Eon | - |
dc.date.accessioned | 2021-06-22T09:26:10Z | - |
dc.date.available | 2021-06-22T09:26:10Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2098 | - |
dc.description.abstract | Hafnia ferroelectric materials have gained prominence as promising materials for advanced memory applications due to their high scalability and full-complementary metal oxide semiconductor compatibility. In this paper, we present a comprehensive study on the electrical properties of Pt/Hf0.5Zr0.5O2/TiN asymmetric ferroelectric tunnel junction (FTJ) devices. The ferroelectric behavior of 4- and 5-nm Hf0.5Zr0.5O2 (HZO) thin films was confirmed by using piezoresponse force microscopy and conductive-atomic force microscopy. The typical current-voltage characteristics of the FTJ devices with two resistance states due to the tunneling electroresistance (TER) effect have been analyzed using a direct tunneling model based on the Wentzel-Kramers-Brillouin approximation. Further, we have proposed a method to extract the effective mass of the HZO thin film by numerical analysis using the MOS leakage current model. Finally, a dependence of the TER on the HZO thickness is analyzed to realize a high TER ratio. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Ji-Hoon | - |
dc.identifier.doi | 10.1063/1.5119948 | - |
dc.identifier.scopusid | 2-s2.0-85073387529 | - |
dc.identifier.wosid | 000492035500041 | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.115, no.15, pp.1 - 6 | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 115 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | LIMITS | - |
dc.subject.keywordPlus | FILMS | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.5119948 | - |
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