High performance H-2 evolution realized in 20 mu m-thin silicon nanostructured photocathodes
- Authors
- Jung, Jin-Young; Park, Min-Joon; Li, Xiaopeng; Kim, Jong-Ho; Wehrspohn, Ralf B.; Lee, Jung-Ho
- Issue Date
- Apr-2015
- Publisher
- Royal Society of Chemistry
- Citation
- Journal of Materials Chemistry A, v.3, no.18, pp.9456 - 9460
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Materials Chemistry A
- Volume
- 3
- Number
- 18
- Start Page
- 9456
- End Page
- 9460
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21003
- DOI
- 10.1039/c5ta00156k
- ISSN
- 2050-7488
- Abstract
- Thickness reduction in high-purity silicon wafers is beneficial for cost-efficient hydrogen evolution utilizing silicon photocathodes. However, two major issues need to be resolved: insufficient light absorption by a thin Si absorber and poor charge transfer reaction by dominant surface recombination. Here, we present 20 mm-thin Si photocathodes employing Pt-nanoparticle-coated silicon nanoholes that realize a photocurrent of 23 mA cm(-2) (at 0 V vs. RHE) corresponding to the amount typically achieved by a conventional wafer (similar to 200 mm-thick).
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21003)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.