Nanoscale Resistive Switching Memory Device Composed of NiO Nanodot and Graphene Nanoribbon Nanogap Electrodes
DC Field | Value | Language |
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dc.contributor.author | Kim, Woo-Hee | - |
dc.contributor.author | Park, Chang Soo | - |
dc.contributor.author | Son, Jong Yeog | - |
dc.date.accessioned | 2021-06-22T22:21:47Z | - |
dc.date.available | 2021-06-22T22:21:47Z | - |
dc.date.created | 2021-02-18 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21449 | - |
dc.description.abstract | We report a nanoscale resistive random access memory (RRAM) device consisting of a NiO nanodot and graphene nanoribbon (GNR) nanogap electrodes. The GNR nanogap was established by an electroburning process induced by applying voltage ramp stress between the two ends of the GNR. A NiO nanodot was then deposited between the nanogapped GNR electrodes by an elaborately controllable dip pen lithography method using a nickel carbonate [Ni2 (CO3)(OH)2] solution. The nanoscale GNR/NiO/GNR RRAM device exhibited reliable unipolar resistive switching characteristics with low SET/RESET voltages and currents, which might be the result of its miniaturized size and well-defined Ohmic contacts between the NiO nanodot and GNR electrodes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Pergamon Press Ltd. | - |
dc.title | Nanoscale Resistive Switching Memory Device Composed of NiO Nanodot and Graphene Nanoribbon Nanogap Electrodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Woo-Hee | - |
dc.identifier.doi | 10.1016/j.carbon.2014.07.081 | - |
dc.identifier.scopusid | 2-s2.0-84920555128 | - |
dc.identifier.wosid | 000342657100040 | - |
dc.identifier.bibliographicCitation | Carbon, v.79, no.1, pp.388 - 392 | - |
dc.relation.isPartOf | Carbon | - |
dc.citation.title | Carbon | - |
dc.citation.volume | 79 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 388 | - |
dc.citation.endPage | 392 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | Electrodes | - |
dc.subject.keywordPlus | Graphene | - |
dc.subject.keywordPlus | Nanostructured materials | - |
dc.subject.keywordPlus | Nanostructures | - |
dc.subject.keywordPlus | Nanotechnology | - |
dc.subject.keywordPlus | Nickel | - |
dc.subject.keywordPlus | Nickel oxide | - |
dc.subject.keywordPlus | Nonvolatile storage | - |
dc.subject.keywordPlus | Ohmic contacts | - |
dc.subject.keywordPlus | Random access storage | - |
dc.subject.keywordPlus | Switching systems | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0008622314007325?pes=vor | - |
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