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Room temperature magnetoresistance of horizontally aligned Mn-doped ZnO nanowires on terrace edges
- Authors
- Kim, Woo-Hee; Son, JongYeog
- Issue Date
- Oct-2014
- Publisher
- Elsevier BV
- Keywords
- Mn-doped ZnO nanowire; Pulsed laser deposition; RT ferromagnetism; Step edge decoration method
- Citation
- Materials Letters, v.133, pp.101 - 104
- Indexed
- SCIE
SCOPUS
- Journal Title
- Materials Letters
- Volume
- 133
- Start Page
- 101
- End Page
- 104
- ISSN
- 0167-577X
- Abstract
- We investigated Mn-doped ZnO nanowires (NWs) laterally aligned on each terrace edge of a sapphire substrate. The Mn-doped ZnO NWs were prepared by a step edge decoration method combined with pulsed laser deposition. The Mn-doped ZnO NWs exhibited strain effects as a function of NW diameters and room temperature ferromagnetism, which are characterized by X-ray scattering and a magnetization hysteresis loop, respectively. In addition, the magnetoresistance of the Mn-doped ZnO NWs as a diluted magnetic semiconductor is found to be -0.2% for 3 T at room temperature.
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Related Researcher
- Kim, Woo Hee
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)