Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator
DC Field | Value | Language |
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dc.contributor.author | Jin, Hyun Soo | - |
dc.contributor.author | Cho, Young Jin | - |
dc.contributor.author | Lee, Sang-Moon | - |
dc.contributor.author | Kim, Dae Hyun | - |
dc.contributor.author | Kim, Dae Woong | - |
dc.contributor.author | Lee, Dongsoo | - |
dc.contributor.author | Park, Jong-Bong | - |
dc.contributor.author | Won, Jeong Yeon | - |
dc.contributor.author | Lee, Myoung-Jae | - |
dc.contributor.author | Cho, Seong-Ho | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.contributor.author | Park, Tae Joo | - |
dc.date.accessioned | 2021-06-22T22:24:16Z | - |
dc.date.available | 2021-06-22T22:24:16Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21545 | - |
dc.description.abstract | Atomic-layer-deposited Al2O3 films were grown on ultrathin-body In-0.53 Ga0.47As substrates for IIIV compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH4)(2)S) solution, and dry processing using post-deposition annealing (PDA) under a H2S atmosphere. The PDA under the H2S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH4)(2)S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH4)(2)S wet-treatment than the PDA under a H2S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H2S atmosphere following (NH4)(2)S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices. (C) 2014 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier BV | - |
dc.title | Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1016/j.apsusc.2014.07.123 | - |
dc.identifier.scopusid | 2-s2.0-84922830937 | - |
dc.identifier.wosid | 000342360300027 | - |
dc.identifier.bibliographicCitation | Applied Surface Science, v.315, pp.178 - 183 | - |
dc.relation.isPartOf | Applied Surface Science | - |
dc.citation.title | Applied Surface Science | - |
dc.citation.volume | 315 | - |
dc.citation.startPage | 178 | - |
dc.citation.endPage | 183 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIXED CHARGE | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordPlus | NITRIDATION | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | III-V | - |
dc.subject.keywordAuthor | MOSFETs | - |
dc.subject.keywordAuthor | Sulfur Passivation | - |
dc.subject.keywordAuthor | H2S | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433214016511?via%3Dihub | - |
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