Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs
DC Field | Value | Language |
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dc.contributor.author | Bae, Hagyoul | - |
dc.contributor.author | Seo, Hyojoon | - |
dc.contributor.author | Jun, Sungwoo | - |
dc.contributor.author | Choi, Hyunjun | - |
dc.contributor.author | Ahn, Jaeyeop | - |
dc.contributor.author | Hwang, Junseok | - |
dc.contributor.author | Lee, Jungmin | - |
dc.contributor.author | Oh, Saeroonter | - |
dc.contributor.author | Bae, Jong-Uk | - |
dc.contributor.author | Choi, Sung-Jin | - |
dc.contributor.author | Kim, Dae Hwan | - |
dc.contributor.author | Kim, Dong Myong | - |
dc.date.accessioned | 2021-06-22T22:25:08Z | - |
dc.date.available | 2021-06-22T22:25:08Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21585 | - |
dc.description.abstract | A sub-bandgap optoelectronic differential ideality factor technique is proposed for extraction of the intrinsic density-of-states (DOS) over the bandgap in amorphous semiconductor thin-film transistors (TFTs). In the proposed technique, the gate bias-dependent differential change in the difference of ideality factors (d Delta eta(V-GS)/dV(GS)) between dark and sub-bandgap photonic excitation condition is employed. With the sub-bandgap photons (h nu < E-g), the photonic excitation of electrons is confined only from the localized DOS over the bandgap. We applied the proposed technique to a-InGaZnO TFTs with W/L = 50/25 mu m/mu m and extracted the energy distribution of the intrinsic DOS for the localized states over the bandgap. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Saeroonter | - |
dc.identifier.doi | 10.1109/TED.2014.2348592 | - |
dc.identifier.scopusid | 2-s2.0-84907459038 | - |
dc.identifier.wosid | 000342909800032 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.10, pp.3566 - 3569 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 61 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3566 | - |
dc.citation.endPage | 3569 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DENSITY-OF-STATES | - |
dc.subject.keywordPlus | CAPACITANCE | - |
dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
dc.subject.keywordAuthor | density-of-states (DOS) | - |
dc.subject.keywordAuthor | differential ideality factor | - |
dc.subject.keywordAuthor | InGaZnO (IGZO) | - |
dc.subject.keywordAuthor | optoelectronic | - |
dc.subject.keywordAuthor | subgap thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | subthreshold | - |
dc.subject.keywordAuthor | TFT | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6891249 | - |
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