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Self-purification model for metal-assisted chemical etching of metallurgical silicon
- Authors
- Li, Xiaopeng; Xiao, Yanjun; Yan, Chenglin; Zhou, Keya; Miclea, Paul-Tiberiu; Meyer, Sylke; Schweizer, Stefan L.; Sprafke, Alexander; Lee, Jung-Ho; Wehrspohn, Ralf B.
- Issue Date
- Aug-2014
- Publisher
- Pergamon Press Ltd.
- Keywords
- Metal assisted chemical etching; metallurgical silicon; purification effect; transitional metal impurity; etching model
- Citation
- Electrochimica Acta, v.138, pp.476 - 480
- Indexed
- SCIE
SCOPUS
- Journal Title
- Electrochimica Acta
- Volume
- 138
- Start Page
- 476
- End Page
- 480
- ISSN
- 0013-4686
- Abstract
- Metal-assisted chemical etching (MaCE) of metallurgical-grade silicon (MG-Si) has improved the purity of MG-Si (similar to 99%) to close to solar-grade (similar to 99.9999%) by removing metal impurities during the successful preparation of porous silicon nanowires (SiNWs). A new etching principle is proposed to explain the different levels of chemical reduction between various metal impurities with pore formation during etching. This model provides chemical insights into the relationship between dissolved metal ions and pores evolved during the formation of SiNWs. (C) 2014 Elsevier Ltd. All rights reserved.
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Related Researcher
- Lee, Jung-Ho
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)