Atomic Layer Deposition of B2O3/SiO2 Thin Films and Application to an Efficient Diffusion Doping Process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Woo-Hee | - |
dc.contributor.author | Oh, Il-Kwon | - |
dc.contributor.author | Kim, Min-Kyu | - |
dc.contributor.author | Maeng, Wan Joo | - |
dc.contributor.author | Lee, Chang-Wan | - |
dc.contributor.author | Lee, Gyeongho | - |
dc.contributor.author | Lansalot-Matras, Clement | - |
dc.contributor.author | Noh, Wontae | - |
dc.contributor.author | Thompson, David | - |
dc.contributor.author | Chu, David | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.accessioned | 2021-06-22T22:45:31Z | - |
dc.date.available | 2021-06-22T22:45:31Z | - |
dc.date.created | 2021-02-18 | - |
dc.date.issued | 2014-08 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/22023 | - |
dc.description.abstract | We investigated atomic layer deposition (ALD) of B2O3 and SiO2 thin films using trimethylborate (TMB) and bis-(diethylamino)silane (SAM-24) precursors, focusing on growth characteristics and film properties. For both cases, ALD processes using O3 and O2 plasma as reactants exhibited well-defined growth saturation and linear growth behavior without any incubation cycles, and produced highly pure, stoichiometric films. In the case of B2O3 films, however, SiO2 layer passivation is required onto the B2O 3 due to a spontaneous decomposition caused by moisture in air. On the basis of electrical characterization, the detailed dielectric properties of SiO2 and B2O3/passivation SiO2 films were extensively discussed including the k-value, flat band voltage, and leakage currents. Then, boron-doped SiO2 films with different B/(B + Si) compositions were prepared by controlling B2O3 and SiO2 growth cycles, followed by drive-in annealing and a subsequent wet removal process. Based on both theoretical estimation and SIMS depth profile results, we demonstrated that the surface doping concentration is effectively modulated with controllable B doping contents in the B-doped SiO2 films. © the Partner Organisations 2014. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Atomic Layer Deposition of B2O3/SiO2 Thin Films and Application to an Efficient Diffusion Doping Process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Woo-Hee | - |
dc.identifier.doi | 10.1039/c4tc00648h | - |
dc.identifier.scopusid | 2-s2.0-84903999516 | - |
dc.identifier.wosid | 000339396700009 | - |
dc.identifier.bibliographicCitation | Journal of Materials Chemistry C, v.2, no.29, pp.5805 - 5811 | - |
dc.relation.isPartOf | Journal of Materials Chemistry C | - |
dc.citation.title | Journal of Materials Chemistry C | - |
dc.citation.volume | 2 | - |
dc.citation.number | 29 | - |
dc.citation.startPage | 5805 | - |
dc.citation.endPage | 5811 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | GROWTH-CHARACTERISTICS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordPlus | NI | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2014/TC/c4tc00648h | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.