Influence of growth parameters on the optical properties of selective area grown GaN nanorods by plasma-assisted molecular beam epitaxy
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang-Tae | - |
dc.contributor.author | Kumar, R. Saravana | - |
dc.contributor.author | Jeon, Seung-Ki | - |
dc.contributor.author | Kim, Moon-Deock | - |
dc.contributor.author | Kim, Song-Gang | - |
dc.contributor.author | Oh, Jae-Eung | - |
dc.date.accessioned | 2021-06-22T23:03:50Z | - |
dc.date.available | 2021-06-22T23:03:50Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2014-07 | - |
dc.identifier.issn | 0022-2313 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/22412 | - |
dc.description.abstract | We demonstrate the selective area growth (SAG) of GaN nanorods (NRs) on patterned Ti/Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy. Nanoholes pattern on Si(1 1 1) substrate were fabricated by a colloidal lithography technique and then GaN NRs were grown by varying the growth parameters, namely growth temperature, N-2 plasma power and Ga flux. Under similar experimental conditions, GaN NRs grown on patterned Ti/Si(1 1 1) substrate showed improved size homogeneity and optical properties compared to GaN NRs grown on non-patterned Si(1 1 1) substrate. Photoluminescence spectra of SAG GaN NRs exhibited emission peaks corresponding to neutral donor bound excitons (D degrees X), donor-acceptor pair (DAP) and yellow luminescence (YL) bands at 3.477 eV, 3.280 eV and 2.245 eV respectively. Unlike D degrees X, both DAP and YL bands showed strong dependence on growth conditions. Results demonstrate that V-Ga-involved defects act as deep acceptors and are responsible for the observed defect emissions in GaN NRs. (C) 2014 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Influence of growth parameters on the optical properties of selective area grown GaN nanorods by plasma-assisted molecular beam epitaxy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Jae-Eung | - |
dc.identifier.doi | 10.1016/j.jlumin.2014.02.026 | - |
dc.identifier.scopusid | 2-s2.0-84896486135 | - |
dc.identifier.wosid | 000336116300030 | - |
dc.identifier.bibliographicCitation | JOURNAL OF LUMINESCENCE, v.151, pp.188 - 192 | - |
dc.relation.isPartOf | JOURNAL OF LUMINESCENCE | - |
dc.citation.title | JOURNAL OF LUMINESCENCE | - |
dc.citation.volume | 151 | - |
dc.citation.startPage | 188 | - |
dc.citation.endPage | 192 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | DEEP LEVELS | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | NANOCOLUMNS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | MBE | - |
dc.subject.keywordAuthor | Nitrides | - |
dc.subject.keywordAuthor | GaN nanorods | - |
dc.subject.keywordAuthor | Selective area growth | - |
dc.subject.keywordAuthor | Plasma-assisted molecular beam epitaxy | - |
dc.subject.keywordAuthor | Growth temperature | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022231314001264?via%3Dihub | - |
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