Influence of growth parameters on the optical properties of selective area grown GaN nanorods by plasma-assisted molecular beam epitaxy
- Authors
- Lee, Sang-Tae; Kumar, R. Saravana; Jeon, Seung-Ki; Kim, Moon-Deock; Kim, Song-Gang; Oh, Jae-Eung
- Issue Date
- Jul-2014
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Nitrides; GaN nanorods; Selective area growth; Plasma-assisted molecular beam epitaxy; Growth temperature; Photoluminescence
- Citation
- JOURNAL OF LUMINESCENCE, v.151, pp.188 - 192
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF LUMINESCENCE
- Volume
- 151
- Start Page
- 188
- End Page
- 192
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/22412
- DOI
- 10.1016/j.jlumin.2014.02.026
- ISSN
- 0022-2313
- Abstract
- We demonstrate the selective area growth (SAG) of GaN nanorods (NRs) on patterned Ti/Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy. Nanoholes pattern on Si(1 1 1) substrate were fabricated by a colloidal lithography technique and then GaN NRs were grown by varying the growth parameters, namely growth temperature, N-2 plasma power and Ga flux. Under similar experimental conditions, GaN NRs grown on patterned Ti/Si(1 1 1) substrate showed improved size homogeneity and optical properties compared to GaN NRs grown on non-patterned Si(1 1 1) substrate. Photoluminescence spectra of SAG GaN NRs exhibited emission peaks corresponding to neutral donor bound excitons (D degrees X), donor-acceptor pair (DAP) and yellow luminescence (YL) bands at 3.477 eV, 3.280 eV and 2.245 eV respectively. Unlike D degrees X, both DAP and YL bands showed strong dependence on growth conditions. Results demonstrate that V-Ga-involved defects act as deep acceptors and are responsible for the observed defect emissions in GaN NRs. (C) 2014 Elsevier B.V. All rights reserved.
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