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Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Na, Sang-Chul | - |
| dc.contributor.author | Kim, Jae-Jun | - |
| dc.contributor.author | Chun, Min Chul | - |
| dc.contributor.author | Jin, Da Hee | - |
| dc.contributor.author | Ahn, Seung-Eon | - |
| dc.contributor.author | Kang, Bo Soo | - |
| dc.date.accessioned | 2021-06-22T23:45:07Z | - |
| dc.date.available | 2021-06-22T23:45:07Z | - |
| dc.date.issued | 2014-03 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/23344 | - |
| dc.description.abstract | The capacitance (C) and the resistance (R) were measured at various states as the reset process progressed in bipolar-resistance-switching Ta/TaOx/Pt thin film capacitors. The reset process was found to undergo three sequential stages where C and R showed different behavior: increasing C and constant R before an abrupt reset transition, the rapid increase of both C and R upon transition, and saturated C thereafter. These behaviors can be explained in terms of the annihilation of the oxygen vacancies followed by rupture of the conducting channels. (C) 2014 AIP Publishing LLC. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.4869755 | - |
| dc.identifier.scopusid | 2-s2.0-84897401916 | - |
| dc.identifier.wosid | 000334078500073 | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.104, no.12, pp 1 - 5 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 104 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 5 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | IMPEDANCE SPECTROSCOPY | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
| dc.subject.keywordPlus | MEMORY | - |
| dc.subject.keywordAuthor | THIN-FILMS | - |
| dc.subject.keywordAuthor | MEMORY | - |
| dc.subject.keywordAuthor | IMPEDANCE SPECTROSCOPY | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4869755 | - |
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Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)