Triangular Ferroelectric Domains of Highly (111)-oriented NaNbO3 Thin Film on a Glass Substrate

Abstract

Highly (111)-oriented polycrystalline NaNbO3 (NNO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To obtain a well-crystallized Pt bottom electrode on glass substrates, Ta buffer layers were employed between Pt bottom electrodes and glass substrates. The NNO thin film exhibited good ferroelectricity with high remanent polarization (2P r ≈ 46 μC/cm2) and leakage current density (∼2 × 10-6 A/cm2 at 500 kV/cm). Based on a piezoelectric force microscope study, it is demonstrated that the NNO thin film with triangular grains has ferroelectric domain wall energy slightly less than PbTiO3 thin films. © 2014 The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.