Palladium/Single-Walled Carbon Nanotube Back-to-Back Schottky Contact-Based Hydrogen Sensors and Their Sensing Mechanism
- Authors
- Zhang, Miluo; Brooks, Lauren L.; Chartuprayoon, Nicha; Bosze, Wayne; Choa, Yong-ho; Myung, Nosang V.
- Issue Date
- Jan-2014
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Schottky contact; hydrogen (H-2) gas sensor; Pd; single-walled carbon nanotubes (SWNTs); response time
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.6, no.1, pp.319 - 326
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 6
- Number
- 1
- Start Page
- 319
- End Page
- 326
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/24094
- DOI
- 10.1021/am404328g
- ISSN
- 1944-8244
- Abstract
- A Schottky contact-based hydrogen (H-2) gas sensor operable at room temperature was constructed by assembling single-walled carbon nanotubes (SWNTs) on a Si/SiO2 substrate bridged by Pd microelectrodes in a chemiresistive/chemical field effect transistor (chemFET) configuration. The Schottky barrier (SB) is formed by exposing the Pd SWNT interfacial contacts to H-2 gas, the analyte it was designed to detect. Because a Schottky barrier. height (SBH) acts as an exponential bottleneck to current flow, the electrical response of the sensor can be particularly sensitive to small changes in SBH, yielding an enhanced response to H-2 gas. The sensing mechanism was analyzed by I V and FET properties before and during H-2 exposure. I-V-sd characteristics clearly displayed an equivalent back-to-back Schottky diode configuration and demonstrated the formation of a SB during H-2 exposure. The I-V-g characteristics revealed a decrease in the carrier mobility without a change in carrier concentration; thus, it corroborates that modulation of a SB via H-2 adsorption at the Pd-SWNT interface is the main sensing mechanism.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.