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Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shim, Jong-In | - |
| dc.contributor.author | Kim, Hyunsung | - |
| dc.contributor.author | Shin, Dong Soo | - |
| dc.date.accessioned | 2021-06-23T00:23:39Z | - |
| dc.date.available | 2021-06-23T00:23:39Z | - |
| dc.date.issued | 2014-11 | - |
| dc.identifier.issn | 2162-108X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/24146 | - |
| dc.description.abstract | Experimental efficiency droop phenomena have been consistently explained by the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. ? OSA 2014 | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | OSA - The Optical Society | - |
| dc.title | Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes | - |
| dc.type | Article | - |
| dc.publisher.location | 중국 | - |
| dc.identifier.doi | 10.1364/acpc.2014.ath4i.2 | - |
| dc.identifier.scopusid | 2-s2.0-85091231824 | - |
| dc.identifier.bibliographicCitation | Asia Communications and Photonics Conference, ACP, pp 1 - 3 | - |
| dc.citation.title | Asia Communications and Photonics Conference, ACP | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Efficiency | - |
| dc.subject.keywordPlus | Gallium alloys | - |
| dc.subject.keywordPlus | III-V semiconductors | - |
| dc.subject.keywordPlus | Indium alloys | - |
| dc.subject.keywordPlus | Light emitting diodes | - |
| dc.subject.keywordPlus | Semiconductor alloys | - |
| dc.subject.keywordPlus | Semiconductor quantum wells | - |
| dc.subject.keywordPlus | Efficiency droops | - |
| dc.subject.keywordPlus | High currents | - |
| dc.subject.keywordPlus | InGaN quantum wells | - |
| dc.subject.keywordPlus | Low currents | - |
| dc.subject.keywordPlus | Nonradiative recombination rates | - |
| dc.subject.keywordPlus | Radiative recombination rate | - |
| dc.subject.keywordPlus | Photonics | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8687501?arnumber=8687501&SID=EBSCO:edseee | - |
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)