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Experimental Exploitation of Random and Deterministic Data Patterns for Stringent DDR4 I/O Timing Margins

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dc.contributor.authorLee, Kiseok-
dc.contributor.authorLi, Tan-
dc.contributor.authorBaeg, Sanghyeon-
dc.date.accessioned2021-06-22T09:43:10Z-
dc.date.available2021-06-22T09:43:10Z-
dc.date.issued2019-08-
dc.identifier.issn1598-1657-
dc.identifier.issn2233-4866-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2419-
dc.description.abstractIn this paper, I/O timing margins are experimentally measured by DQS groups, for a DDR4 RDIMM with 2133 Mbps data rate, to study the margin effects of the special combination and sequence of random and fault-based deterministic data patterns. The most effective 94 data patterns are newly developed after experimentally investigating three test patterns factors, which consist of test algorithms, address directions, and data patterns; the most influential factor was data patterns, which resulted in the average margin reduction of 15.2%. The maximum of 11.8% margin was reduced by the proposed 94 patterns (in comparison to 28-bit PRBS pattern), which was from both selected PRBS and fault-based deterministic data patterns.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEK PUBLICATION CENTER-
dc.titleExperimental Exploitation of Random and Deterministic Data Patterns for Stringent DDR4 I/O Timing Margins-
dc.typeArticle-
dc.publisher.location대한민국-
dc.identifier.doi10.5573/JSTS.2019.19.4.388-
dc.identifier.scopusid2-s2.0-85073363247-
dc.identifier.wosid000484084400010-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.19, no.4, pp 388 - 395-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume19-
dc.citation.number4-
dc.citation.startPage388-
dc.citation.endPage395-
dc.type.docTypeArticle-
dc.identifier.kciidART002496328-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordAuthorProgrammable memory built-In self-test (PMBIST) margin test-
dc.subject.keywordAuthorDDR4 I/O timing margins-
dc.subject.keywordAuthorpseudo-random binary sequence (PRBS)-
dc.subject.keywordAuthorinterconnect fault model-
dc.subject.keywordAuthorfault-critical-random-94 (FCR-94) data pattern (DP) set-
dc.identifier.urlhttps://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE08767118&language=ko_KR&hasTopBanner=true-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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