수소 및 산소 첨가에 따른 산화아연막의 전기적, 광학적, 구조적 물성

Abstract

We studied for improvrment in TTFT channel layer performance. ZnO film are rf-sputtering at 200Co Ar=30(sccm) O2 ,H2, O2+H2 gas ambient for electrical, optical and structural properties. For the film prepared under O2+H2 ambient, elctrical resistivity 102~103Ω㎝ and optical transmission more than 80% in the visible region have been achieved optimizing the power and chamber pressure during the film deposition.