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산화인듐아연 박막에 대한 급속 열처리 효과
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진석 | - |
| dc.date.accessioned | 2021-06-23T00:48:44Z | - |
| dc.date.available | 2021-06-23T00:48:44Z | - |
| dc.date.issued | 2009-07-16 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/24726 | - |
| dc.description.abstract | This work shows the effect of rapid thermal annealing (RTA) on properties of indium-zinc oxide (IZO) thin films. The RTA temperatue was controlled between 300 and 500℃ under the two different ambient conditions such as vacuum and oxygen. Structural, optical, and electrical properties of IZO films were characterized in terms of RTA conditions. XRD and resistivity measurements showed that crystallization for IZO films occurred at an RTA temperature of about 400℃. For the IZO film treated at 500℃ of RTA, the resistivity, carrier concentration, hall mobility, and transmittance were approximately 102Ωcm, 1015cm-3, 10cm2/V?s, and 85%, respectively, which would be suitable for its application to the channel layer in transparent thin film transistors. | - |
| dc.title | 산화인듐아연 박막에 대한 급속 열처리 효과 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 대한전기학회 하계학술대회 | - |
| dc.citation.conferencePlace | 무주, 대한민국 | - |
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)