Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells
- Authors
- Um, Han-Don; Park, Kwang-Tae; Jung, Jin-Young; Li, Xiaopeng; Zhou, Keya; Jee, Sang-Won; Lee, Jung-Ho
- Issue Date
- Mar-2014
- Publisher
- Royal Society of Chemistry
- Keywords
- UNIFORM; PERFORMANCE; SILICON NANOWIRES; METAL PARTICLES; SURFACE; FABRICATION; PLANAR; ARRAYS
- Citation
- Nanoscale, v.6, no.10, pp.5193 - 5199
- Indexed
- SCIE
SCOPUS
- Journal Title
- Nanoscale
- Volume
- 6
- Number
- 10
- Start Page
- 5193
- End Page
- 5199
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/25883
- DOI
- 10.1039/c4nr00455h
- ISSN
- 2040-3364
- Abstract
- Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interface directly with the top-ends of nanowires. Here we describe a self-aligned selective emitter successfully integrated into an antireflective Si NW solar cell. By one-step metal-assisted chemical etching, NW arrays formed only at light-absorbing areas between top-metal grids while selectively retaining Ohmic contact regions underneath the metal grids. We observed a remarkable similar to 40% enhancement in blue responses of internal quantum efficiency, corresponding to a conversion efficiency of 12.8% in comparison to the 8.05% of a conventional NW solar cell.
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