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Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells

Authors
Um, Han-DonPark, Kwang-TaeJung, Jin-YoungLi, XiaopengZhou, KeyaJee, Sang-WonLee, Jung-Ho
Issue Date
Mar-2014
Publisher
Royal Society of Chemistry
Keywords
UNIFORM; PERFORMANCE; SILICON NANOWIRES; METAL PARTICLES; SURFACE; FABRICATION; PLANAR; ARRAYS
Citation
Nanoscale, v.6, no.10, pp.5193 - 5199
Indexed
SCIE
SCOPUS
Journal Title
Nanoscale
Volume
6
Number
10
Start Page
5193
End Page
5199
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/25883
DOI
10.1039/c4nr00455h
ISSN
2040-3364
Abstract
Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interface directly with the top-ends of nanowires. Here we describe a self-aligned selective emitter successfully integrated into an antireflective Si NW solar cell. By one-step metal-assisted chemical etching, NW arrays formed only at light-absorbing areas between top-metal grids while selectively retaining Ohmic contact regions underneath the metal grids. We observed a remarkable similar to 40% enhancement in blue responses of internal quantum efficiency, corresponding to a conversion efficiency of 12.8% in comparison to the 8.05% of a conventional NW solar cell.
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Lee, Jung-Ho
ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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