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Condution Band Offset at the InN/GaN Heterojunction by Capacitance Voltage Measurement
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T01:48:44Z | - |
| dc.date.available | 2021-06-23T01:48:44Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 2008-08-27 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/25999 | - |
| dc.publisher | The Korean Physical Society | - |
| dc.title | Condution Band Offset at the InN/GaN Heterojunction by Capacitance Voltage Measurement | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | ISPSA2008 | - |
| dc.relation.isPartOf | ISPSA2008 | - |
| dc.citation.title | ISPSA2008 | - |
| dc.citation.conferencePlace | Jeju,Korea | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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