Condution Band Offset at the InN/GaN Heterojunction by Capacitance Voltage Measurement

오재응

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Condution Band Offset at the InN/GaN Heterojunction by Capacitance Voltage Measurement

Authors: 오재응

Issue Date: 27-Aug-2008

Publisher: The Korean Physical Society

Citation: ISPSA2008

URI: https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/25999

Conference Name: ISPSA2008

Place: Jeju,Korea

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Appears in Collections: COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 2. Conference Papers

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