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Architectural design tradeoffs in SRAM-based TCAMs

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dc.contributor.authorAhmed, Ali-
dc.contributor.authorPark, Kyungbae-
dc.contributor.authorKhan, Saqib Ali-
dc.contributor.authorMaroof, Naeem-
dc.contributor.authorBaeg, Sanghyeon-
dc.date.accessioned2021-06-22T10:00:49Z-
dc.date.available2021-06-22T10:00:49Z-
dc.date.issued2019-07-
dc.identifier.issn1349-2543-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2750-
dc.description.abstractAn SRAM-based TCAM (SbT) memory architecture is proposed which exploits the tradeoffs among critical design parameters - such as throughput (T), latency (L), SRAM utilization (U), and power dissipation (P). An 18 kb TCAM is implemented on FPGA that can be adapted as latency & throughput efficient (LTE), Mid-efficient (ME), or a power & memory efficient (PME). Our implementation results show that LTE utilizes 79.3% and 96.5% more SRAM bit resources, consumes 45% and 55% more dynamic power than the ME and the PME, respectively. However, the LTE architecture shows an efficient single clock cycle latency and higher throughput than ME and PME, respectively.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG-
dc.titleArchitectural design tradeoffs in SRAM-based TCAMs-
dc.typeArticle-
dc.publisher.location일본-
dc.identifier.doi10.1587/elex.16.20190267-
dc.identifier.scopusid2-s2.0-85071375413-
dc.identifier.wosid000476909400005-
dc.identifier.bibliographicCitationIEICE ELECTRONICS EXPRESS, v.16, no.13, pp 1 - 3-
dc.citation.titleIEICE ELECTRONICS EXPRESS-
dc.citation.volume16-
dc.citation.number13-
dc.citation.startPage1-
dc.citation.endPage3-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusHARDWARE-
dc.subject.keywordPlusSEARCH-
dc.subject.keywordAuthorTCAM-
dc.subject.keywordAuthorSRAM-
dc.subject.keywordAuthorFPGA-
dc.subject.keywordAuthoremulation-
dc.subject.keywordAuthormemory architecture-
dc.identifier.urlhttps://www.jstage.jst.go.jp/article/elex/16/13/16_16.20190267/_article-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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