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Co-sputtering 방법으로 증착된 실리콘 산화아연 박막의 특성 분석
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 차경웅 | - |
| dc.contributor.author | 이상혁 | - |
| dc.contributor.author | 김원 | - |
| dc.contributor.author | 박진석 | - |
| dc.date.accessioned | 2021-06-23T03:02:56Z | - |
| dc.date.available | 2021-06-23T03:02:56Z | - |
| dc.date.issued | 2013-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/27536 | - |
| dc.description.abstract | Effects of Si on ZnO structure of Transparent thin film transistors (TFTs) using silicon zinc oxide (SZO) films as an active chnannel were extensively investigated. The SZO films were deposited at room temperature via co-sputtering by silicon (99.999%) target and zinc oxide (99.999%) target. The film characteristics of the Si-Zn-O film, such as roughness, grain size, atomic%, and transmittance, were observed in terms of the Si content. | - |
| dc.format.extent | 2 | - |
| dc.language | 한국어 | - |
| dc.language.iso | KOR | - |
| dc.publisher | 대한전기학회 | - |
| dc.title | Co-sputtering 방법으로 증착된 실리콘 산화아연 박막의 특성 분석 | - |
| dc.title.alternative | Characterization of silicon zinc oxide thin films deposited by co-sputtering | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.bibliographicCitation | 2013년도 대한전기학회 제44회 하계학술대회, pp 1245 - 1246 | - |
| dc.citation.title | 2013년도 대한전기학회 제44회 하계학술대회 | - |
| dc.citation.startPage | 1245 | - |
| dc.citation.endPage | 1246 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | other | - |
| dc.identifier.url | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE02310577 | - |
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)