Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Seoung-Hwan | - |
dc.contributor.author | Shim, Jong-In | - |
dc.date.accessioned | 2021-06-23T03:05:19Z | - |
dc.date.available | 2021-06-23T03:05:19Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2013-06 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/27609 | - |
dc.description.abstract | The carrier density dependence of the polarization switching characteristics of the light emission in deep-ultraviolet AlGaN/AlN quantum well structures was investigated using the multiband effective-mass theory and non-Markovian model. The critical Al composition from transverse electric (TE) to transverse-magnetic (TM) polarization decreases gradually with increasing carrier density. This can be explained by the fact that matrix elements for TM-polarization above the band-edge (k(parallel to) = 0) is much larger than those for TE-polarization. That is, the light emission for TM-polarization becomes larger than that for TE-polarization at higher carrier density because carriers will occupy higher states above k(parallel to) = 0 in the conduction and valence bands. As a result, the critical Al composition is reduced with increasing carrier density. Also, the critical Al composition is observed to decrease with increasing well width. (C) 2013 AIP Publishing LLC. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shim, Jong-In | - |
dc.identifier.doi | 10.1063/1.4809759 | - |
dc.identifier.scopusid | 2-s2.0-84879092014 | - |
dc.identifier.wosid | 000320621600009 | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.102, no.22, pp.1 - 5 | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 102 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | GAIN | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4809759 | - |
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