Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong-Kwon | - |
dc.contributor.author | Kwon, Se-Hun | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.date.accessioned | 2021-06-22T10:00:59Z | - |
dc.date.available | 2021-06-22T10:00:59Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2019-07 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2767 | - |
dc.description.abstract | Rutile-TiO2 thin films have potential for use in high-k applications, such as dynamic random-access memory capacitors; however, they are difficult to realize without using noble-metal-based oxide substrates. Therefore, we proposed a new approach for the preparation of rutile TiO2 by a small amount of Sn doping and the insertion of ultra-thin SnO2 to achieve enhanced dielectric performance without using noble-metal-based electrodes. It was confirmed that the crystallinity of rutile TiO2 was remarkably enhanced in Sn-doped TiO2 formed on an ultra-thin SnO2 interlayer. Moreover, 10 nm-thick Sn-doped TiO2 thin film on a 1-nm SnO2 interlayer exhibited a high dielectric constant of about 80. (C) 2019 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier BV | - |
dc.title | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Ji-Hoon | - |
dc.identifier.doi | 10.1016/j.matlet.2019.03.018 | - |
dc.identifier.scopusid | 2-s2.0-85062593243 | - |
dc.identifier.wosid | 000462761700001 | - |
dc.identifier.bibliographicCitation | Materials Letters, v.246, pp.1 - 4 | - |
dc.relation.isPartOf | Materials Letters | - |
dc.citation.title | Materials Letters | - |
dc.citation.volume | 246 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NM | - |
dc.subject.keywordAuthor | Titanium dioxide | - |
dc.subject.keywordAuthor | Tin dioxide | - |
dc.subject.keywordAuthor | Rutile structure | - |
dc.subject.keywordAuthor | Dynamic random-access memory capacitor | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167577X19303908?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.