Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process

Full metadata record
DC Field Value Language
dc.contributor.authorKim, Minchul-
dc.contributor.authorChoi, Kwangseok-
dc.contributor.authorKim, Junghyun-
dc.date.accessioned2021-06-22T10:02:17Z-
dc.date.available2021-06-22T10:02:17Z-
dc.date.issued2019-06-
dc.identifier.issn1531-1309-
dc.identifier.issn1558-1764-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2890-
dc.description.abstractA novel backward distributed frequency doubler is proposed showing a high output power level without buffer amplifiers. The position of the output port is reversed compared to a conventional distributed structure, and the lengths of the transmission lines are optimized to effectively multiply the frequency and remove the fundamental-frequency signal (f(0)) without additional circuits such as a balun. Thanks to no need of buffer amplifiers at the final stage of the doubler, the proposed circuit was implemented using a low cost, 0.15-mu mGaAs pHEMT process. The measured results show a peak conversion gain and saturated output power of -4.3 dB and 7.1 dBm, respectively, with a 12.3% fractional 3-dB bandwidth. The proposed frequency doubler exhibits a fundamental-frequency rejection of -23 dB at 96 GHz with a moderate chip size of 1.0 x 2.0 mm(2).-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleW-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/LMWC.2019.2913307-
dc.identifier.scopusid2-s2.0-85067091425-
dc.identifier.wosid000471007000010-
dc.identifier.bibliographicCitationIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.29, no.6, pp 400 - 402-
dc.citation.titleIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.citation.volume29-
dc.citation.number6-
dc.citation.startPage400-
dc.citation.endPage402-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordAuthorFrequency multiplier-
dc.subject.keywordAuthormillimeter wave-
dc.subject.keywordAuthorpseudomorphic high electron transistor (pHEMT)-
dc.subject.keywordAuthorW-band-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8708925-
Files in This Item
Go to Link
Appears in
Collections
COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher KIM, JUNG HYUN photo

KIM, JUNG HYUN
ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE