W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process
DC Field | Value | Language |
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dc.contributor.author | Kim, Minchul | - |
dc.contributor.author | Choi, Kwangseok | - |
dc.contributor.author | Kim, Junghyun | - |
dc.date.accessioned | 2021-06-22T10:02:17Z | - |
dc.date.available | 2021-06-22T10:02:17Z | - |
dc.date.issued | 2019-06 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.issn | 1558-1764 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2890 | - |
dc.description.abstract | A novel backward distributed frequency doubler is proposed showing a high output power level without buffer amplifiers. The position of the output port is reversed compared to a conventional distributed structure, and the lengths of the transmission lines are optimized to effectively multiply the frequency and remove the fundamental-frequency signal (f(0)) without additional circuits such as a balun. Thanks to no need of buffer amplifiers at the final stage of the doubler, the proposed circuit was implemented using a low cost, 0.15-mu mGaAs pHEMT process. The measured results show a peak conversion gain and saturated output power of -4.3 dB and 7.1 dBm, respectively, with a 12.3% fractional 3-dB bandwidth. The proposed frequency doubler exhibits a fundamental-frequency rejection of -23 dB at 96 GHz with a moderate chip size of 1.0 x 2.0 mm(2). | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/LMWC.2019.2913307 | - |
dc.identifier.scopusid | 2-s2.0-85067091425 | - |
dc.identifier.wosid | 000471007000010 | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.29, no.6, pp 400 - 402 | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 29 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 400 | - |
dc.citation.endPage | 402 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | Frequency multiplier | - |
dc.subject.keywordAuthor | millimeter wave | - |
dc.subject.keywordAuthor | pseudomorphic high electron transistor (pHEMT) | - |
dc.subject.keywordAuthor | W-band | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8708925 | - |
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