Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C-V Measurement
DC Field | Value | Language |
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dc.contributor.author | Bae, Hagyoul | - |
dc.contributor.author | Choi, Hyunjun | - |
dc.contributor.author | Oh, Saeroonter | - |
dc.contributor.author | Kim, Dae Hwan | - |
dc.contributor.author | Bae, Jonguk | - |
dc.contributor.author | Kim, Jaehyeong | - |
dc.contributor.author | Kim, Yun Hyeok | - |
dc.contributor.author | Kim, Dong Myong | - |
dc.date.accessioned | 2021-06-23T04:22:25Z | - |
dc.date.available | 2021-06-23T04:22:25Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/29227 | - |
dc.description.abstract | We report a technique for extraction of the intrinsic subgap density of states (gA,(int)(E)) by deembedding the parasitic capacitance in amorphous indium-gallium-zinc-oxide TFTs through the optical charge pumping method. As structure-dependent parameters in the proposed extraction technique, the overlap length L-ov between the source/drain (S/D) and the active layer and the parasitic overlap area between the gate and the S/D metal (C-par,C-S/C-par,C-D) are considered under dark and subbandgap photonic states. We obtained g(A,int)(E) as a superposition of the exponential deep and tail states with N-TA,N-int = 6.0x10(16) eV(-1) . cm(-3), kT(TA,int) = 0.16 eV, N-DA,N-int = 1.8 x 10(15) eV(-1) . cm(-3), and kT(DA,int) = 1.9 eV from samples with various parasitic areas. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C-V Measurement | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Saeroonter | - |
dc.identifier.doi | 10.1109/LED.2012.2222014 | - |
dc.identifier.scopusid | 2-s2.0-84871748017 | - |
dc.identifier.wosid | 000312834200019 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.34, no.1, pp.57 - 59 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 34 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 57 | - |
dc.citation.endPage | 59 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | FRINGE CAPACITANCE | - |
dc.subject.keywordAuthor | Amorphous | - |
dc.subject.keywordAuthor | extraction | - |
dc.subject.keywordAuthor | overlap capacitance | - |
dc.subject.keywordAuthor | parasitic capacitance | - |
dc.subject.keywordAuthor | parasitic effect | - |
dc.subject.keywordAuthor | subgap density of states (DOS) | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6361260/ | - |
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