Evaluation of very dilute alkaline solutions for wafer cleaning with megasonic irradiation
DC Field | Value | Language |
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dc.contributor.author | Jeong, Ji hyun | - |
dc.contributor.author | Kang, Bong Kyun | - |
dc.contributor.author | Kim, Min su | - |
dc.contributor.author | Sohn, Hong Seong | - |
dc.contributor.author | Busnaina, Ahmed.A. | - |
dc.contributor.author | Park, Jin-Goo | - |
dc.date.accessioned | 2021-06-23T05:24:09Z | - |
dc.date.available | 2021-06-23T05:24:09Z | - |
dc.date.issued | 2013-00 | - |
dc.identifier.issn | 1012-0394 | - |
dc.identifier.issn | 1662-9779 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/30545 | - |
dc.description.abstract | In the semiconductor wafer cleaning, ammonium hydroxide based APM (ammonium peroxide mixture) has been widely used to remove particles and organic contaminants [. However as the film thickness and line width of semiconductor structure scales down rapidly, the material losses by etching reaction of alkaline chemicals can cause serious problem in yield loss due to electric failure. The presence of H2O2 could enhance the material loss on silicon wafer. Very dilute alkaline chemicals might be of interest since it could minimize any possible ionic contamination or chemical residues from chemicals as long as we control the surface roughness and particle removal efficiency. Also the characterization of these very dilute alkaline chemicals will be very useful for particle removal in gas dissolved DI water. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Scitec Publications Ltd. | - |
dc.title | Evaluation of very dilute alkaline solutions for wafer cleaning with megasonic irradiation | - |
dc.type | Article | - |
dc.publisher.location | 스위스 | - |
dc.identifier.doi | 10.4028/www.scientific.net/SSP.195.181 | - |
dc.identifier.scopusid | 2-s2.0-84874198167 | - |
dc.identifier.wosid | 000316095400042 | - |
dc.identifier.bibliographicCitation | Solid State Phenomena, v.195, pp 181 - 184 | - |
dc.citation.title | Solid State Phenomena | - |
dc.citation.volume | 195 | - |
dc.citation.startPage | 181 | - |
dc.citation.endPage | 184 | - |
dc.type.docType | Conference Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | Dilute alkaline solution | - |
dc.subject.keywordAuthor | Etch rate | - |
dc.subject.keywordAuthor | Megasonic | - |
dc.subject.keywordAuthor | Particle removal efficiency | - |
dc.subject.keywordAuthor | Surface roughness | - |
dc.identifier.url | https://www.scientific.net/SSP.195.181 | - |
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